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PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE650R279A
0.2 W L, S-BAND POWER GaAs MES FET
DESCRIPTION
The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures.
FEATURES
* High Output Power * High Linear Gain : PO (1 dB) = +23 dBm typ. : 16 dB typ.
* High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 50 mA, f = 1.9 GHz
ORDERING INFORMATION (PLAN)
Part Number NE650R279A-T1 79A Package Supplying Form 12 mm tape width, 1 kpcs/reel
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE650R279A)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Forward Current Gate Reverse Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGSO ID IGF IGR PT Tch Tstg Ratings 15 -7 0.3 8 8 2.1 150 -65 to +150 Unit V V A mA mA W C C
Caution
Please handle this device at static-free workstation, because this is an electrostatic sensitive device.
The information in this document is subject to change without notice.
Document No. P13678EJ1V0DS00 (1st edition) Date Published August 1998 N CP(K) Printed in Japan
(c)
1998
NE650R279A
RECOMMENDED OPERATING LIMITS
Characteristics Drain to Source Voltage Gain Compression Channel Temperature Symbol VDS Gcomp Tch Test Conditions MIN. TYP. 6.0 MAX. 6.0 3.0 +125 Unit V dB C
ELECTRICAL CHARACTERISTICS
(TA = 25C, Unless otherwise specified, using NEC standard test fixture.)
Characteristics Saturated Drain Current Pinch-off Voltage Gate to Drain Break Down Voltage Thermal Resistance Output Power at 1 dB Gain Compression Point Drain Current Power Added Efficiency Linear Gain
Note 1
Symbol IDSS Vp BVgd
Test Conditions VDS = 2.5 V, VGS = 0 V VDS = 2.5 V, ID = 1 mA Igd = 1 mA
MIN.
TYP. 150
MAX.
Unit mA
-2.5 13
-0.5
V V
Rth PO (1 dB)
Channel to Case f = 1.9 GHz, VDS = 6.0 V Rg = 30 IDset = 50 mA (RF OFF) Note 2 15.0
40 23.0
60
C/W dBm
ID
72 45 16.0
mA % dB
add
GL
Notes 1. Pin = 0 dBm 2. DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples.
2
Preliminary Data Sheet
NE650R279A
NE650R279A S-PARAMETERS TEST CONDITIONS: VDS = 6.0 V, IDset = 50 mA (Preliminary Data)
S11 freq. (MHz) 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG. 0.865 0.861 0.850 0.839 0.833 0.827 0.817 0.809 0.806 0.795 0.789 0.781 0.778 0.779 0.778 0.778 0.781 ANG. (deg.) -103.4 -108.0 -112.1 -116.0 -120.5 -124.9 -129.4 -133.1 -137.7 -143.0 -148.3 -153.4 -157.5 -162.9 -167.0 -172.1 -176.7 MAG. 5.788 5.593 5.439 5.182 5.026 4.992 4.888 4.739 4.628 4.518 4.403 4.383 4.348 4.065 3.910 3.763 3.632 S21 ANG. (deg.) 133.2 131.9 130.8 129.1 129.1 128.4 125.6 124.9 123.6 121.8 119.9 118.2 116.6 115.8 113.8 113.1 112.8 MAG. 0.070 0.072 0.073 0.075 0.078 0.081 0.082 0.082 0.081 0.081 0.083 0.086 0.087 0.087 0.085 0.084 0.083 S12 ANG. (deg.) 53.2 51.5 51.1 50.9 50.6 49.2 47.2 45.8 45.6 46.2 46.5 46.0 44.3 42.7 42.2 42.1 41.4 MAG. 0.403 0.397 0.392 0.387 0.382 0.376 0.368 0.360 0.349 0.336 0.325 0.311 0.300 0.288 0.276 0.264 0.256 S22 ANG. (deg.) -73.5 -76.7 -79.2 -82.1 -84.9 -87.5 -90.2 -93.0 -95.7 -98.5 -101.6 -104.9 -107.6 -110.5 -113.5 -117.3 -121.0
Preliminary Data Sheet
3
NE650R279A
APPLICATION CIRCUIT EXAMPLE (Unit: mm)
VGS VDS
Rg Tantalum Condenser 47 F 1000 p Tantalum Condenser 100 F
/4 OPEN STUB
/4 LINE
/4 OPEN STUB
9 2 C1 4 INPUT 21 5 3
32 R1 1
4 4
5 3 4 8 7 2 2 50 LINE C2 OUTPUT
10 7.5
4
GND f = 1.9 GHZ VDS = 6 V IDset = 50 mA (RF OFF) C1 = 30 pF C2 = 30 pF R1 = 5.1 Rg = 30 Substrate: Teflon glass ( r = 2.6) t = 0.8 mm
4
Preliminary Data Sheet
NE650R279A
79A Package Dimensions (Unit: mm)
1.5 0.2 4.2 max. Source Source
Gate
Drain
Gate
Drain
5.7 max.
1.0 max.
0.6 0.15
0.4 0.15 5.7 max.
0.8 0.15
4.4 max.
0.8 max. 3.6 0.2
0.9 0.2
0.2 0.1
Bottom View
79A Package Recommended P.C.B. Layout (Unit: mm)
4.0 1.7 Stop up the hole with a rosin or something to avoid solder flow.
Drain
Gate
5.9
1.2
Source through hole 0.2 x 33 0.5 0.5
0.5
6.1
Preliminary Data Sheet
1.0
1.2 max.
5
NE650R279A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative.
Recommended Condition Symbol IR35-00-2
Soldering Method Infrared Reflow
Soldering Conditions Package peak temperature: 235C or below Time: 30 seconds or less (at 210C) Note Count: 2, Exposure limit : None Pin temperature: 260C Time: 5 seconds or less (per pin row) Note Exposure limit : None
Partial Heating
-
Note After opening the dry pack, keep it in a place below 25C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating).
6
Preliminary Data Sheet
NE650R279A
[MEMO]
Preliminary Data Sheet
7
NE650R279A
Caution
The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal.
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5

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